Observation of transient current induced in silicon carbide diodes by ion irradiation

Oshima, Takeshi; Lee, K. K.; Onoda, Shinobu; Kamiya, Tomihiro; Oikawa, Masakazu*; Laird, J. S.; Hirao, Toshio; Ito, Hisayoshi

Nuclear Instruments and Methods in Physics Research B, 206(1-4), p.979 - 983, 2003/05

https://doi.org/10.1016/S0168-583X(03)00906-6

Ion beam induced current for pn SiC diode was observed by using MeV range ion beams.The diodes used in this study were pn diode fabricated on n-type epitaxial 6H-SiC. The p region was formed using Al-ion implantation at 800 C and subsequent annealing at 1800 C. The value of charge collection for diode applied to 30V by 12MeV-Ni microbeam irradiationis estimated to be (1.7-1.8)10Q from the analyzing transient-IBIC measurement.The efficiency of the charge collection is 85-93%.